Plasma-enhanced chemical vapor deposition (PECVD)
Plasma-enhanced chemical vapor deposition coating
Plasma-enhanced chemical vapor deposition (PECVD) is a thin-film deposition technique that allows for tunable control over the chemical composition of a thin film. The films typically deposited using PECVD are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxy-nitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (α-Si). Silane (SiH4), the silicon source gas, is combined with an oxygen source gas to form silicon dioxide or a nitrogen gas source to produce silicon nitride.
Numerical methods used to solve multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. Such numerical simulations help us to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.
Research and Development in Plasma Technologies
Simulation of Complex Systems to Gain Most Optimized Configuration with Advanced Technology
Magnetized plasma simulations of realistic devices using the kinetic or the multi-fluid plasma models are examples that benefit from high-order accuracy. The multi-fluid plasma model only assumes local thermodynamic equilibrium within each fluid, e.g. ion and electron fluids for the two-fluid plasma model.
Plasma Dynamics use advanced electromagnetic FEA, CFD and particle-in-cell (PIC) codes, designed for executing multi-scale, plasma physics simulations. Based on the problem and its detail, we use special commercial code or even develop new codes and subroutines to capture the interaction between charged particles (electrons and ions) and external and self-generated electric and magnetic fields.